HBDM60V600W-7
Manufacturer:
Diodes Incorporated
Mfr.Part #:
HBDM60V600W-7
Datasheet:
Description:
BJTs SC-70-6 SMD/SMT NPN, PNP 200 mW Collector Base Voltage (VCBO):80 V Collector Emitter Voltage (VCEO):400 mV Emitter Base Voltage (VEBO):6 V
| Parameter | Value |
|---|---|
| Length | 2.2 mm |
| Width | 1.35 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 6 |
| Height | 1 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| Polarity | NPN, PNP |
| REACH SVHC | No SVHC |
| Frequency | 100 MHz |
| Number of Elements | 2 |
| Max Power Dissipation | 200 mW |
| Power Dissipation | 200 mW |
| Max Collector Current | 600 mA |
| Collector Emitter Breakdown Voltage | 60 V |
| Transition Frequency | 100 MHz |
| Continuous Collector Current | 500 mA |
| Element Configuration | Dual |
| Collector Emitter Voltage (VCEO) | 400 mV |
| Max Breakdown Voltage | 60 V |
| Gain Bandwidth Product | 100 MHz |
| Collector Base Voltage (VCBO) | 80 V |
| Collector Emitter Saturation Voltage | -500 mV |
| Emitter Base Voltage (VEBO) | 6 V |
| hFE Min | 50 |
| Schedule B | 8541210080 |
| Max Cutoff Collector Current | 100 nA |
| Transistor Type | NPN, PNP |
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